Growth Or Measurement Method

E_g (eV)

Laser-assisted Synthesis of semiconductor chromium disilicide films

0.2^a

Polycrystalline samples grown by amorphous thin films of Cr and Si in double electron-gun evaporation system.

0.27 ± 0.01^b

Hall Effect measurements of Si-doped and Mn-modified CrSi₂ crystal

0.30 - 0.35^c

Single crystals of CrSi₂ grown using the floating zone melting technique. Energy gap estimated from the temperature dependence of resistivity.

0.32^d

Synchrotron Radiation Photoemission measurement of epitaxial CrSi₂ films prepared on Si (111) substrate at room temperature and 20K

0.32^e

CrSi₂ films prepared by molecular beam epitaxy on CrSi₂ templates grown on Si (111) Substrate

0.34^f

Polycrystalline thin films of CrSi₂ grown on silicon substrates (Samples annealed at 1100˚C)

0.35^g

Ellipsometry of polycrystalline thin films of CrSi₂

≤0.36^h

Optical absorption measurement of CrSi₂ thin films

0.35 - 0.5ⁱ

Transmittance and Reflectance Spectroscopy Study of A-type Epitaxial films 100nm thick grown by the Template method

0.37^j direct

Optical Spectra measurement of CrSi₂ polycrystalline thin films

0.50^k

Synthesis of CrSi₂ films by high current Cr ion implantation

0.7 and 0.8^l