| Parameter | Value | Parameter | Value |
| Transmitted optical power | 900 mW | Fixed capacitance per unit area | 112 pF/cm2 |
| Semi-angle at half power | 70 degree | Open-loop gain | 10 |
| Effective area in PD | 1 cm2 | Temperature | 298 K |
| FOV of PD | 60 degree | FET trans-conductance | 30 mS |
| PD sensitivity | 0.2 A/W | FET noise factor | 1.5 |
| Back ground current | 0.0051 A | I3 | 0.0868 |
| Noise bandwidth factor | 0.562 |
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