| Symbol | Description | Value/unit |
| W | Gate width | 1 µm |
| L | Gate Length | 100 nm |
| Nd | Donor level concentration | 1 × 1019 cm−3 |
| K | Boltzmann’s Constant | 1.38 × 10−23 J/K |
| T | Operating temperature | 300 K |
| Q | Electronic charge | 1.6 × 10−19 C |
| Dd | Thickness of doped layer in Nano-HEMT | 90 nm |
| Di | Thickness of undoped layer in Nano-HEMT | 80 nm |
| Δd=dd+di | Correction factor | 170 nm |
| Фb | Schottky barrier Height | 0.697 |
| Μ | Mobility | 900 cm2/Vs |
| Eg | Band gap energy of GaAs | 3.44 eV |
| Nv | Density of state in valance band | 9 × 1018 cm−3 |
| Nc | Density of state in conduction band | 4.7 × 1017 cm−3 |
| Єs | Semiconductor Permittivity | 12.9 × 8.85 × 10−14 F/cm |
| Vp2 | Pinch-off voltage in doped layer | 1.75 V |
| F | Operating Frequency | 1 GHz |
| N | No. of conduction Electrons | 1018 |
| αH | Hooge’s Parameter | 2×103 |