Symbol | Description | Value/unit |
W | Gate width | 1 µm |
L | Gate Length | 100 nm |
Nd | Donor level concentration | 1 × 1019 cm−3 |
K | Boltzmann’s Constant | 1.38 × 10−23 J/K |
T | Operating temperature | 300 K |
Q | Electronic charge | 1.6 × 10−19 C |
Dd | Thickness of doped layer in Nano-HEMT | 90 nm |
Di | Thickness of undoped layer in Nano-HEMT | 80 nm |
Δd=dd+di | Correction factor | 170 nm |
Фb | Schottky barrier Height | 0.697 |
Μ | Mobility | 900 cm2/Vs |
Eg | Band gap energy of GaAs | 3.44 eV |
Nv | Density of state in valance band | 9 × 1018 cm−3 |
Nc | Density of state in conduction band | 4.7 × 1017 cm−3 |
Єs | Semiconductor Permittivity | 12.9 × 8.85 × 10−14 F/cm |
Vp2 | Pinch-off voltage in doped layer | 1.75 V |
F | Operating Frequency | 1 GHz |
N | No. of conduction Electrons | 1018 |
αH | Hooge’s Parameter | 2×103 |