Property

Material

GaN

AlGaN/GaN

SiC

Diamond

Si

GaAs/AlGaAs,

InGaAs

Band gap energy, Eg (MV/cm)

3.44 eV

3.26 eV

5.45 eV

1.12 eV

1.43 eV

Electric breakdown field, Ec (MV/cm)

3

3

10

0.3

0.4

Saturated (Peak) Velocity electronics, Vsat (VPeak) (×107 cm/s)

2.5

2.0

2.7

1.0

1.0

Electron mobility, μs (cm2/V∙s)

900

700

4800

1500

8500

2DEG density, ns (×1013 cm−2)

1.0

N.A

N.A

N.A

<0.2

Thermal conductivity (W/cm∙K)

1.3 - 2.1

3.7 - 4.5

22

1.5

0.5

Relative Permittivity εr

9.0

10.1

5.5

11.8

1.8