Step Process:

12.

PBLOCOS. Deposition of a stacked silicon dioxide, polysilicon and nitride films.

13.

Active area definition.

14.

Channel stopper implantation

15.

Field oxide growing at 1000˚C. Tox = 0.58 μm, t = 2 hours

16.

VTn boron adjust implantation

17.

VTp boron adjust implantation

18.

Gate oxide T = 900˚C, Tox = 20 nm.

19.

LPCVD Gate Poly, Tpoly = 400 nm

20.

Poly phosphorus doping at 1000˚C, 10 Ω/□

21.

Source/Drain implantation

22.

Dopant activation at 950˚C.

23.

Titanium Salicidation at 900˚C