Step Process:

1.

Initial Oxidation, T = 1000˚C, dry O₂, Tox = 20 nm.

2.

Mark alignment and TMAH silicon etch at 60˚C.

3.

P implantation, Dose = 6.5 × 10¹⁰ cm⁻², (N-well). Energy = 100 KeV

4.

B implantation, Dose = 1.5 × 10¹³ cm⁻², (P-well). Energy = 80 KeV

5.

Drive-in at 1200˚C, 200 minutes, N2 ambient.

6.

Etching of initial oxide.