| Parameter | Symbol | Value | Units |
| Threshold Voltage N/P channels | Vto | 700 | mV |
| Gate Oxide Thickness | Tox | 20 | nm |
| N-Well Depth | Xnwell | ~3.5 | μm |
| N-Well Surface Concentration | Nnwell | ~4.5 × 1015 | cm−3 |
| P-Well Depth | Xpwell | ~3.5 | μm |
| P-Well Surface Concentration | Npwell | ~9 × 1016 | cm−3 |
| Poly Gate thickness | Tg | 0.4 | μm |
| Source/Drain Junction Depth | Xj | 0.7 | μm |