Layer Properties

CIGS

SDL

ZMO

i-ZnO

ZnO:B

Layer thickness (nm)

2000

200

Variable

200

400

Layer band-gap: Eg (eV)

1.15

1.2

Variable

3.3

3.3

Electrons affinity: χ (eV)

4.5

4.5

Variable

4.55

4.55

Dielectric relative permittivity: ε/ε0

13.6

13.6

10

9

9

Conduction band effective density of states: Nc (cm−3)

2.2 × 1018

2.2 × 1018

1.3 × 1018

3.1 × 1018

3 × 1018

Valence band effective density of state: Nv (cm−3)

1.5 × 1019

1.5 × 1019

9.1 × 1018

1.8 × 1019

1.8 × 1019

Electron thermal velocity: νe (cm/s)

3.9 × 107

3.9 × 107

3.1 × 107

2.4 × 107

2.4 × 107

Hole thermal velocity: νh (cm/s)

1.4 × 107

1.4 × 107

1.6 × 107

1.3 × 107

1.3 × 107

Electron mobility: µe (cm2/Vs)

100

variable

72

100

100

Hole mobility: µh (cm2/Vs)

12.5

1.25

20

31

31

Doping concentration (cm−3)

2 × 1016

variable

5 × 1017

1017

1020

Bulk defect properties

Defect density and type: N (cm−3)

1014 (D)

Variable (D)

5 × 1016 (A)

1016 (A)

1016 (A)

Capture cross section electrons: σe (cm2)

10−15

10−13

10−15

10−15

10−15

Capture cross section electrons: σh (cm2)

10−11

10−15

5 × 10−13

5 × 10−13

5 × 10−13

Interface properties

Interface state

CIGS/SDL

SDL/ZMO

Interface conduction band offset: ΔEc (eV)

0.3

variable

Defect density and type: N (cm−2)

1011 (Neutral)

3 × 1013 (Neutral)