| Layer Properties | ||||||
| CIGS | SDL | ZMO | i-ZnO | ZnO:B | ||
Layer thickness (nm) | 2000 | 200 | Variable | 200 | 400 | ||
Layer band-gap: Eg (eV) | 1.15 | 1.2 | Variable | 3.3 | 3.3 | ||
Electrons affinity: χ (eV) | 4.5 | 4.5 | Variable | 4.55 | 4.55 | ||
Dielectric relative permittivity: ε/ε0 | 13.6 | 13.6 | 10 | 9 | 9 | ||
Conduction band effective density of states: Nc (cm−3) | 2.2 × 1018 | 2.2 × 1018 | 1.3 × 1018 | 3.1 × 1018 | 3 × 1018 | ||
Valence band effective density of state: Nv (cm−3) | 1.5 × 1019 | 1.5 × 1019 | 9.1 × 1018 | 1.8 × 1019 | 1.8 × 1019 | ||
Electron thermal velocity: νe (cm/s) | 3.9 × 107 | 3.9 × 107 | 3.1 × 107 | 2.4 × 107 | 2.4 × 107 | ||
Hole thermal velocity: νh (cm/s) | 1.4 × 107 | 1.4 × 107 | 1.6 × 107 | 1.3 × 107 | 1.3 × 107 | ||
Electron mobility: µe (cm2/Vs) | 100 | variable | 72 | 100 | 100 | ||
Hole mobility: µh (cm2/Vs) | 12.5 | 1.25 | 20 | 31 | 31 | ||
Doping concentration (cm−3) | 2 × 1016 | variable | 5 × 1017 | 1017 | 1020 | ||
| Bulk defect properties | ||||||
Defect density and type: N (cm−3) | 1014 (D) | Variable (D) | 5 × 1016 (A) | 1016 (A) | 1016 (A) | ||
Capture cross section electrons: σe (cm2) | 10−15 | 10−13 | 10−15 | 10−15 | 10−15 | ||
Capture cross section electrons: σh (cm2) | 10−11 | 10−15 | 5 × 10−13 | 5 × 10−13 | 5 × 10−13 | ||
| Interface properties | ||||||
Interface state | CIGS/SDL |
| SDL/ZMO | ||||
Interface conduction band offset: ΔEc (eV) | 0.3 |
| variable | ||||
Defect density and type: N (cm−2) | 1011 (Neutral) |
| 3 × 1013 (Neutral) | ||||