| Parameters | Layers | ||
| CIGS | CdS | ZnO | |
| Thickness (nm) | 2000 | 50 | 80 |
| Bangap (eV) | 1.0 - 1.6* | 2.4 | 3.3 |
| Electron affinity (eV) | 4.5 - 3.9 | 4.45 | 4.6 |
| Dielectric constant | 15 - 10 | 10 | 9.0 |
| Electron mobility (cm2/Vs) | 100 | 100 | 100 |
| Hole mobility (cm2/Vs) | 25 | 25 | 25 |
| Density of states in CB (cm−3) | 1 × 1018 | 1 × 1018 | 1 × 1018 |
| Density of states in VB (cm−3) | 1 × 1019 | 1 × 1019 | 1 × 1019 |
| Shallow donor conc. (cm−3) | - | 1 × 1018 | 1 × 1017 |
| Shallow acceptor conc. (cm−3) | 4.1015, 3.1015, 6.1015 [16] | - | - |
| Radiative recombination (cm3・s−1) | 1 × 10−10 | 1 × 10−10 | 1 × 10−10 |
| Surface recombination velocity (cm・s−1) | 1 × 106 (back) | - | - |
| Defect type | Donor | Acceptor | Acceptor |
| Defect distribution | Ga−dep.* | Uniform | Uniform |
| Defect density (cm−3) | (see Figure 2)* | 6 × 1017 | 1 × 1016 |
| Defect capture cross section e- (cm2) | 1 × 10−15 | 1 × 10−15 | 1 × 10−15 |
| Defect capture cross section h (cm2) | 5 × 10−13 | 5 × 10−13 | 5 × 10−13 |