Nitrogen Gas 40 W RF power and 5 mT pressure

Wafer

Temperature

Thickness

Atomic percentage

N/Ga

Time

(˚C)

(nm)

Ga (%)

N (%)

O (%)

Ratio

(hours)

Silicon

400

40

9.7

9.28

8.77

0.96

1

Sapphire

400

40

8.04

7.23

47.32

0.90

1

Silicon

700

300

48.09

36.85

6.28

0.77

10

Sapphire

700

300

51.35

37.6

6.48

0.73

10