| VGS | 0.60 V |
| VDS | 0.60 V |
| VTO | 0.20 V |
| Source/drain doping concentration (ND) | 1 × 1020 cm−3 |
| Channel body acceptor impurity concentration (NA) | 1 × 1016 cm−3 |
| Channel width (W) | 125 nm |
| Channel length (L) | 10 nm |
| Source length/drain length (LSD) | 7.5 nm |
| Silicon channel thickness (TSi) | 1.5 nm |
| Top/bottom oxide insulator thickness (TOX) | 1.5 nm |
| Top/bottom insulator relative dielectric constant | 3.9 |
| Channel body relative dielectric constant | 11.7 |
| Top/bottom gate contact work function | 4.1888 eV |