Parameters

MoS2

CZTS

CdS

ZnS

Cd0.4Zn0.6S

i-ZnO

n-ITO

Thickness (nm)

100

100 - 2000

50 - 150

50 - 150

50 - 150

80

60

Bandgap (eV)

1.7

1.5

2.4

3.5

2.98

3.3

3.6

Electron affinity (eV)

4.2

4.5

4.5

4.5

4.2

4.6

4.1

Dielectric permittivity

13.6

10

10

10

9.4

9

10

CB effective density of states (cm−3)

2.2 × 1018

2.2 × 1018

2.2 × 1018

1.8 × 1018

2.2 × 1018

2.2 × 1018

2.2 × 1018

VB effective density of states (cm−3)

1.8 × 1019

l.8 × 1019

1.8 × 1019

1.8 × 1019

1.8 × 1019

1.8 × 1019

1.8 × 1019

Electron thermal velocity (cm s−1)

1 × 107

1 × 107

1 × 107

1 × 107

1 × 107

1 × 107

1 × 107

Hole thermal velocity (cm−1)

1 × 107

1 × 107

1 × 107

1 × 107

1 × 107

1 × 107

1 × 107

Electron mobility (cm2/VJ)

100

100

100

100

270

100

50

Hole mobility (cm2/Vs)

25

25

25

25

27

25

75

Shallow uniform donor density, ND (cm−3)

0

1 × 101

1 × 1018

5 × 1015

1 × 1017

1 × 1018

1 × 1019

Shallow uniform acceptor density, Nu (cm−3)

1 × 1016

2 × 1014

0

1 × 101

0

0

0

Defect type

-

Donor

Acceptor

Acceptor

Acceptor

-

-

Defect density (cm−3)

-

1 × 1013

6 × 1015

6 × 1016

6 × 1016

-

-