Parameters | MoS2 | CZTS | CdS | ZnS | Cd0.4Zn0.6S | i-ZnO | n-ITO |
Thickness (nm) | 100 | 100 - 2000
| 50 - 150 | 50 - 150 | 50 - 150 | 80 | 60 |
Bandgap (eV) | 1.7 | 1.5 | 2.4 | 3.5 | 2.98 | 3.3 | 3.6 |
Electron affinity (eV) | 4.2 | 4.5 | 4.5 | 4.5 | 4.2 | 4.6 | 4.1 |
Dielectric permittivity | 13.6 | 10 | 10 | 10 | 9.4 | 9 | 10 |
CB effective density of states (cm−3) | 2.2 × 1018 | 2.2 × 1018 | 2.2 × 1018 | 1.8 × 1018 | 2.2 × 1018 | 2.2 × 1018 | 2.2 × 1018 |
VB effective density of states (cm−3) | 1.8 × 1019 | l.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 | 1.8 × 1019 |
Electron thermal velocity (cm s−1) | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 |
Hole thermal velocity (cm−1) | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 |
Electron mobility (cm2/VJ) | 100 | 100 | 100 | 100 | 270 | 100 | 50 |
Hole mobility (cm2/Vs) | 25 | 25 | 25 | 25 | 27 | 25 | 75 |
Shallow uniform donor density, ND (cm−3) | 0 | 1 × 101 | 1 × 1018 | 5 × 1015 | 1 × 1017 | 1 × 1018 | 1 × 1019 |
Shallow uniform acceptor density, Nu (cm−3) | 1 × 1016 | 2 × 1014 | 0 | 1 × 101 | 0 | 0 | 0 |
Defect type | - | Donor | Acceptor | Acceptor | Acceptor | - | - |
Defect density (cm−3) | - | 1 × 1013 | 6 × 1015 | 6 × 1016 | 6 × 1016 | - | - |