| Parameter | Si MOSFET | SiC MOSFET | GaN FET |
| RDS,on | 29 mΩ | 30 mΩ | 35 mΩ |
| Ciss | 7149 | 18 pF | 1500 pF |
| Co,tr | 2427 pF | 284 pF | 380 pF |
| Qg | 145 nC | 48 nC | 22 nC |