| Parameter | p-Si [27] | n-ZnO [27] | p-CIGS [27] | n-ZnSe [28] |
| Thickness (µm) | 1.6 | 0.02 | 0.4 | 0.025 |
| Electron Affinity, χe (ev) | 4.05 | 4.60 | 4.50 | 4.09 |
| Dielectric Constant, ϵr | 11.90 | 9 | 13.60 | 10 |
| Bandgap (ev) | 1.12 | 3.30 | 1.30 | 2.700 |
| Density of States in Conduction Band (cm−3) | 2.2 × 1019 | 2.2 × 1018 | 2.2 × 1018 | 2.2 × 1018 |
| Density of States in Valence Band (cm−3) | 2.65 × 1019 | 1.8 × 1018 | 1.8 × 1018 | 1.8 × 1019 |
| Electron Mobility, µp (cm2/V-Sec) | 1400 | 100 | 100 | 50 |
| Hole Mobility, µn (cm2/V-Sec) | 500 | 25 | 25 | 20 |
| Donor Density, Nd (cm−3) | 0 | 1 × 1020 | 0 | 2 × 1018 |
| Acceptor Density, Na (cm−3) | 1 × 1014 | 0 | 2 × 1014 | 0 |