| Layers properties | ||||||||
|
| CIGSe | ODC | ZnS | i-ZnO | ZnO:Al | |||
| Thickness (μm) | 3 | 0.015 [7] [10] | 0.02 | 0.02 | 0.03 | |||
| Band gap Eg (eV) | 1.19 | 1.34 | 3.6 | 3.2 | 3.2 | |||
| Electron affinity χ (eV) | 4.5 [10] | 4.5 [10] | 4.15 | 4.5 [10] | 4.5 [10] | |||
| Dielectric constant εr | 13.6 [7] [10] | 13.6 [7] [10] | 9
| 9 [7] [10] | 9 [7] [10] | |||
| NC (cm−3)/ NV (cm−3) | 6.8 × 1017/ 1.5 × 1019 [7] [10] | 6.8 × 1017/ 1.5 × 1019 [7] [10] | 2.2 × 1018/ 1.8 × 1019 | 3 × 1018/ 1.7 × 1019 [7] [10] | 3 × 1018/ 1.7 × 1019 [7] [10] | |||
| , (cm/s) | 107 | |||||||
| μn (cm2/Vs)/ μp (cm2/Vs) | 100/50 [7] [10] | 10/1.25 [7] [10] | 100/25 | 100/31 [7] | 100/31 [7] [10] | |||
| Doping level (cm−3) | 2.1017 (a) | 2.1017(a) | 1018 (d) | 1018 (d) | 1020 (d) | |||
| Bulk Gaussian defect states | ||||||||
| Nt (cm−3) | 1014 (D) [7] [9] [10] | 1014 (D) [7] [9] [10] | 1017 (A) | 1017(A) | 1017 (A) | |||
| EGD, EGA (eV) | Mid-gap | |||||||
| WGD, WDA (eV) | 0.01 | |||||||
| σn (cm2)/ σp (cm2) | 10−13/ 10−15 [7] [10] | 10−13/ 10−15 [7] [10] | 10−15/ 5 × 10−13 [7] [10] | 10−15/ 5 × 10−13 [7] [10] | 10−15/ 5 × 10−13 [7] [10] | |||
| Interface Gaussian defect states | ||||||||
|
| CIGSe/ODC | ODC(CIGSe)/ZnS | ZnS/i-ZnO | |||||
| ΔEC (eV) | 0 | 0.35 (0.35) | −0.35 | |||||
| ΔEV (eV) | −0.15 | −1.91 (−2.06) | 0.05 | |||||
| Nt (cm−2) | 1010 (D) | 3 × 1018 (D) | - | |||||
| EGD/EGA (eV) | Mid-gap | |||||||
| WGD/WDA (eV) | 0.01 | |||||||
| σn (cm2)/ σp (cm2) | 10−13 10−15 | 10−13 10−15 | - [7] [10] | |||||