Property

Symbol

Unit

SiC

Si

Remarks

FET ON-resistance

R_ds

Ω

0.11

0.22

Almost independent of I_d

FET turn-on loss

E_on

μJ

60

180

Measured at V_t = 300 V, I_t = 10 A

FET turn-off loss

E_off

μJ

40

120

Measured at V_t = 300 V, I_t = 10 A

BD forward voltage

V_f

V

2.15

0.73

Averaged for I_f = 0.1 - 1 A

BD reverse recovery time

t_rr

ns

33

260

Almost independent of I_f