Region |
| Parameters | ||
Material | Thickness (nm) | Doping (cm−3) | Ge component | |
Strain silicon in Emitter | Si | 12 | 1 × 1018 | 0 |
Polysilicon in Emitter | Poly Si | 88 | 1 × 1020 | 0 |
Base | Si1−xGex | 20 | 1 × 1019 | 15 - 30 |
Collector | Si | 60 | 5 × 1017 | 0 |
Collector stress region | Si1−yGey | 60 | 0 | 15 |
N+ silicon | Si | 20 | 1 × 1020 | 0 |
Buried oxide | Oxide | 100 | 0 | 0 |
Silicon substrate | Si | 200 | 1 × 1015 | 0 |