| Material | Temperature | k, Physical Hardness mNµm−3/2 | hkink µm | FNkink mN | Wtransition (mNµm /mN) | Data Origin |
| Silicon (100) | 19˚C | k1 123.2 k2 145.44 k3 151.53 |
0.4077 0.7245 |
29.1622 81.0 |
0.1545 0.4684 | [3] |
| Silicon (001) (B-doped, p-Type) | 25˚C | k1 121.75 k2 155.62 k3 160.62 |
0.2522 0.3309 |
15.2899 25.2002 |
0.02687 0.1942 | [4] |
| Silicon (111) | 30˚C | k1 135. 64 k2 162.07 k3 199.81 |
0,2030 0.3419 |
13.0533 30.7124 |
1.3728 8.7863 | [11] |
| Silicon (111) | 300˚C | k1 130.11 k2 152.07 k3 170.26 |
0.2057 0.3545 |
12.4583 30.3708 |
1.2939 7.7543 | [11] |