| Parameter | n-ZnO | n-graphene | Perovskite, CsSnGeI3 | p-graphene |
| Layer thickness (µm) | 0.033 | 0.033 | Variable | 0.0334 |
| The band gap (eV) | 3.3 | 0.5 | 1.5 | 0.5 |
| Electron affinity (eV) | 4.5 | 4.8 | 3.9 | 4.8 |
| Dielectric permittivity (relative) | 11.9
| 10 | 28 | 7.100 |
| CB effective density of states (1/cm3) | 3.0 × 1018 | 3.0 × 109 | 3.1 × 1018 | 3.0 × 1019 |
| VB effective density of states (1/cm3) | 1.7 × 1019 | 3.0 × 109 | 3.1 × 1018 | 3.0 × 1019 |
| electron thermal velocity (cm/s) |
| 1.0 × 107 | 1.0 × 107 | 1.0 × 107 |
| hole thermal velocity (cm/s) | 1.0 × 107 | 1.0 × 107 | 1.0 × 107 | 1.0 × 107 |
| electron mobility (cm2/Vs) | 1010 | 10 × 105 | 974 | 10 |
| hole mobility (cm2/Vs) | 443 | 10 | 213 | 1.0 × 105 |
| shallow uniform donor density ND (1/cm3) | 0 | 10 × 1018 | 1.0 × 1019 | 0 |
| shallow uniform acceptor density NA (1/cm3) | 5.0 × 1018 | 2.328 | 0 | 1.0 × 1018 |
| Defect density Nt cm−3 | - |
| 1 × 1015 | - |