Layers properties

MoSe₂

CIGSe

ZnS

ZnS

i-ZnO

ZnO:Al

Thickness (μm)

0.01

variable

0.015

0.03

0.02

0.03

Band gap E_g (eV)

1.41

1.19

1.34

3.6

3.2

3.2

Electron affinity χ (eV)

4.4

4.5

4.5

4.15

4.5

4.5

Dielectric constant ε_r

14.9

13.6

13.6

9

9

9

N_C (cm⁻³)

2.2 × 10¹⁸

6.8 × 10¹⁷

6.8 × 10¹⁷

2.2 × 10¹⁸

3 × 10¹⁸

3 × 10¹⁷

N_V (cm⁻³)

1.8 × 10¹⁸

1.5 × 10¹⁹

1.5 × 10¹⁹

1.8 × 10¹⁹

1.7 × 10¹⁹

1.7 × 10¹⁹

$S_{th}^n$ , $S_{th}^p$ (cm/s)

10⁷

μ_n (cm²/Vs)

100

100

10

100

100

100

μ_p (cm²/Vs)

50

50

1.25

25

31

31

Doping level (cm⁻³)

10¹⁹ (a)

6 × 10¹⁷ (a)

6 × 10¹⁷ (a)

10¹⁸ (d)

10¹⁸ (d)

10²⁰ (d)

MoSe₂/CIGS

CIGS/SDL

SDL(CIGS)/ZnS

ZnS/i-ZnO

ΔE_C (eV)

0.1

0

0.35 (0.35)

−0.35

ΔE_V (eV)

−0.12

−0.15

−1.19 (−2.06)

0.05