I

Cell current (A)

$T_c$

Cell Temperature (Kelvin)

V

Cell Voltage (V)

$T_r$

Cell Temperature at reference condition

$I_{ph}$

Light current (I)

$I_{mp}$

Current at peak power point in reference condition (A)

$I_D$

Diode current (A)

$V_{mp}$

Voltage at peak power in reference condition (V)

$I_{sh}$

Shunt current (A)

$I_{ph,ref}$

Reference light current (A)

$I_o$

Saturation current of the diode (A)

G

Irradiance (W/m²)

$I_{o,ref}$

The reverse saturation current (A)

$G_{ref}$

Irradiance at reference condition (W/m²)

$I_{sc}$

Short circuit current (A)

n

Ideality factor of the diode

$V_{oc}$

Open circuit voltage (V)

N

Number of cells in series

${\mu }_{I_{sc}}$

Temperature coefficient of short-circuit current (A/K)

k

Boltzmann constant (1.38 × 10⁻²³ J/K)

q

Electron charge (1.6 × 10⁻¹⁹ coulomb)

$R_{sh}$

Shunt resistance (Ω)

$R_s$

Series resistance of generator (Ω)

$E_g$

Gap Energy (for the silicon E_g = 1.12 eV)