Gate oxide thickness, T_ox (nm)

Threshold voltage, Vth (V)

Subthreshold slope (mV/dec)

On-state current, I_on (μA)

Leakage current, I_off (pA)

DIBL (mV/V)

1.2

0.33957

75.64

805.71

1776.31

38.22

1.8

0.52932

83.06

394.26

58.06

55.08

2.4

0.71897

90.40

187.41

3.81

71.47

3

0.90891

98.04

82.42

0.42

97.94

3.6

1.09925

106.03

31.93

0.07

120.30