Gate oxide thickness, Tox (nm) | Threshold voltage, Vth (V) | Subthreshold slope (mV/dec) | On-state current, Ion (μA) | Leakage current, Ioff (pA) | DIBL (mV/V) |
1.2 | 0.33957 | 75.64 | 805.71 | 1776.31 | 38.22 |
1.8 | 0.52932 | 83.06 | 394.26 | 58.06 | 55.08 |
2.4 | 0.71897 | 90.40 | 187.41 | 3.81 | 71.47 |
3 | 0.90891 | 98.04 | 82.42 | 0.42 | 97.94 |
3.6 | 1.09925 | 106.03 | 31.93 | 0.07 | 120.30 |