Channel doping concentration (cm⁻³)

Threshold voltage, V_th (V)

Subthreshold slope (mV/dec)

On-state current, I_on (μA)

Leakage current, I_off (nA)

DIBL (mV/V)

4 × 10¹⁸

0.27920

74.99

1006.10

27.11

53.14

5 × 10¹⁸

0.33957

75.64

805.71

17.76

38.22

7 × 10¹⁸

0.43427

78.47

510.87

0.03

29.42

1 × 10¹⁹

0.58734

82.44

242.26

0.72

30.41