S-box structure

Area

(μm²)

Tech.

Frequency

(Mhz)

Through-put

(Gbps)

Hardware

efficiency (Mbps/μm²)

The equivalent number of NAND (GE)

Critical path delay

Equivalent critical path delay

Time

(ns)

GE*Time

our design

1593.24

TSMC 90 nm

1041.67

8.333

5.230

565

15 XOR

+ 2 AND

+ 1 AND3X1

+ 2 INV

51 NAND

+ 4 INV

0.96

542.40

[16]

2769.48

TSMC 90 nm

1204.82

9.639

3.480

981

19 XOR

+ 3 AND

+ 1 OR

+ 2 MUX

65 NAND

+ 8 INV

0.83

814.23

[14]

(compact)

-

TSMC 65 nm

328.95

2.632

-

249

-

-

3.04

756.96

[20]

832.13

TSMC 40 nm

1250.00

10.000

12.017

1223

-

-

0.8

978.40