Material

Parameters

ITO

ZnO

In₂O₃

n-Si

i-Si

p-Si

Thickness (cm)

0.005

(variable)

0.007

-

0.006

-

0.008

-

0.009

-

0.008

-

Energy band-gap (eV)

4.224

3.324

2.724

1.824

1.724

1.12

Electron Affinity

2.05

3.45

4.05

4.05

4.05

4.05

Dielectric Permittivity

7.9

8.9

11.9

11.9

11.9

11.9

CB DOS

2.66E19

3.146E19

2.446E19

2.943E19

2.846E19

2.86E19

VB DOS

1.685E19

1.685E19

1.385E19

1.382E19

1.685E19

1.285E19

Electron/hole thermal velocity

1E6/1E5

1E6/1E5

1E6/1E5

7E6/4E5

1E6/1E5

5E6/4E5

Electron Mobility

1.90E2

7.8E2

5.50E2

1.45E2

1.0E2

1.45E2

Hole

Mobility

0.7E2

3.30E2

1.20E2

4.5E2

4.0E2

3.50E2

N_d

3E17

5E17

5E16

7E17

1E9

6E9

N_a

1E9

1E9

1E9

5E8

1E16

6E16