Parameters

p-CIGS

n-Si

i-In2S3

Al-ZnO

Thickness (µm)

0.2 - 2

0.5

0.05

0.1

Bandgap (eV)

1.4

1.12

2.8

3.3

Electron affinity (eV)

4.5

4.0

4.7

4.5

Relative permittivity

13.6

9.8

13.5

9.0

CB (1/cm3)

2.2 × 1018

2.8 × 1019

1.8 × 1018

2.2 × 1018

VB (1/cm3)

1.8 × 1019

2.65 × 1019

4.0 ×1013

1.8 × 1019

Electron mobility (cm2/Vs)

100

100

400

100

Hole mobility (cm2/Vs)

25

100

210

25

ND (1/cm3)

0

1.0 × 1020

1.0 × 105

1.0 × 1018

NA (1/cm3)

2.0 × 1016

0

10

0

Defects density (1/cm3)

1 × 1013 - 1 × 1017

1 ×1014

1 ×1014

0