Material/Model

Property

Values

GaN

Bandgap (eV)

3.43

Electron affinity (eV)

4.1

Dielectric constant

8.9

Effective Conduction Band Density of states (cm⁻³)

2.24 × 10¹⁸

Effective Valence Band Density of states (cm⁻³)

2.51 × 10¹⁹

Impact Ionization

a_n1/2 (cm⁻¹)

2.52 × 10⁸

b_n1/2 (V/cm)

3.41 × 10⁷

a_p1/2 (cm⁻¹)

5.37 × 10⁶

b_p1/2 (V/cm)

1.96 × 10⁷

Incomplete Ionization

Donor Activation Energy (ΔE_D) (meV)

17

α_n (eV.cm)

3.4 × 10⁻⁹

Acceptor Activation Energy (ΔE_A) (meV)

240

α_p (eV.cm)

1.15 × 10⁻⁹

SRH Recombination

Electron Lifetime (τ_n)

1.2 × 10⁻⁸

Hole Lifetime (τ_p)

1.2 × 10⁻⁸

Auger Recombination

Electron Coefficient (cm⁻³∙s)

2.8 × 10⁻³¹

Hole Coefficient (cm⁻³∙s)

9.9 × 10⁻³²