Sputtering | PBII | ||
Target | B4C | DC pulse bias | −5.0 kV |
RF power | 300 W | (Frequency: 1 kHz, Pulse width: 5 µs) | |
Target-Substrate distance | 85 mm | Pulse RF power | 300 W |
(Frequency: 1 kHz, Pulse width: 50 µs) | |||
Source gas | Ar + CH4 (Total: 30 sccm) | ||
CH4 partial pressure | 0 - 0.15 Pa (CH4 flow ratio: 0% - 50%) | ||
Deposition pressure | 0.30 Pa | ||
Deposition time | 120 min |