| Sputtering | PBII | ||
| Target | B4C | DC pulse bias | −5.0 kV |
| RF power | 300 W | (Frequency: 1 kHz, Pulse width: 5 µs) | |
| Target-Substrate distance | 85 mm | Pulse RF power | 300 W |
| (Frequency: 1 kHz, Pulse width: 50 µs) | |||
| Source gas | Ar + CH4 (Total: 30 sccm) | ||
| CH4 partial pressure | 0 - 0.15 Pa (CH4 flow ratio: 0% - 50%) | ||
| Deposition pressure | 0.30 Pa | ||
| Deposition time | 120 min | ||