| Parameter | Value |
| Channel Doping Concentration, Nc | 1015 cm−3 |
| Source/Drain Doping Concentration, Ns/Nd | 1020 cm−3 |
| Source/Drain Region Width, LS/LD | 5 nm |
| Silicon Film Thickness, tsi | 5 nm |
| Gate Oxide Thickness, tox | 2 nm |
| Gate Work Function, ɸG | 4.9 eV |