Clamp device

used

(device width)

Device length

in x direction

Later stage

V_Peak

(V)

Peak

temp

(˚K)

I_Standby

added (V_DD = 2.5 V)

GGNMOS

(200 μm)

12.0 μm

10.7

484

0.004 μA

ST 6-diode

(200 μm)

38.2 μm

8.1

413

4.07 μA

ST 7-diode

(200 μm)

44.0 μm

9.05

440

0.133 μA

TW 4-diode

(50 μm)

32.4 μm

7.5

398

4.22 μA

TW 5-diode

(100 μm)

39.5 μm

6.5

417

0.08 μA

TW 5-diode

(50 μm)

39.5 μm

7.2

433

0.04 μA