| Clamp Device used (device width) | Peak temp. (˚K) | Peak temperature | |
| Location | Time (ns) | ||
| GGNMOS (200 μm) | 407 484 | p+-substrate contacts in D2 Gate-side drain junction in D3 | 450 34 |
| ST 6-diode string (200 μm) | 420 325 | p+-substrate contacts in D2 nw1/p-sub junction in D3 | 87 359 |
| TW 4-diode string (200 μm) | 396 315 | p+-substrate contacts in D2 Dnw1/p-sub junction in D3 | 158 435 |