| Parameter | CuO | CdS | WS2 | In2S3 | IGZO | ITO |
| Thickness (µm) | 0.5 - 4 | 0.050 - 0.12 | 0.050 - 0.12 | 0.050 - 0.12 | 0.050 - 0.12 | 0.200 |
| Band gap (eV) | 1.51 | 2.4 | 1.8 | 2.8 | 3.05 | 3.5 |
| Electron affinity (eV) | 4.07 | 4.4 | 3.95 | 4.5 | 4.16 | 4 |
| Dielectric permittivity | 18.1 | 10 | 13.6 | 13.5 | 10 | 9 |
| CB effective density of states (cm−3) | 2.2 × 1019 | 2.2 × 1018 | 1 × 1018 | 2.2 × 1017 | 5 × 1018 | 2.2 × 1018 |
| VB effective density of states (cm−3) | 5.5 × 1020 | 1.8 × 1019 | 2.4 × 1019 | 1.8 × 1019 | 5 × 1018 | 1.8 × 1019 |
| Electron thermal velocity (cms−1) | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 |
| Hole thermal velocity (cm−1) | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 | 1 × 107 |
| Electron mobility (cm2/Vs) | 100 | 100 | 100 | 100 | 15 | 20 |
| Hole mobility (cm2/Vs) | 0.1 | 25 | 100 | 25 | 0.1 | 10 |
| Shallow uniform donor density, ND (cm−3) | 0 | 1 × 1018 | 1 × 1018 | 1 × 1018 | 1 × 1018 | 1 × 1019 |
| Shallow uniform acceptor density, NA (cm−3) | 1 × 1016 | 0 | 0 | 0 | 0 | 0 |