| Parameters (absorber layers) | CsSnCl3 |
| Thickness (nm) | 800 |
| Band gap, Eg (eV) | 1.52 |
| Electron affinity, X (eV) | 3.90 |
| Dielectric permittivity (relative), εr | 29.4 |
| CB effective density of states, NC (1/cm3) | 1 × 1019 |
| VB effective density of states, NV (1/cm3) | 1 × 1019 |
| Electron mobility, µn (cm2/Vs) | 2 |
| Hole mobility, µh (cm2/Vs) | 2 |
| Shallow uniform acceptor density, NA (1/cm3) | 1 × 1015 |
| Shallow uniform donor density, ND (1/cm3) | 0 |
| Defect density, Nt (1/cm3) | 1 × 1015 |