| Parameter | Name | Value | Unit |
| Z | Channel Width | 100 × 10−6 | (m) |
| L | Channel Length | 3 × 10−6 | (m) |
| a | Active layer thickness | 0.15 × 10−6 | (m) |
| d | Surface-to-substrate thickness | 1 × 10−6 | (m) |
| Ndr | Ionized impurity concentration | 4.95 × 1022 | (/m3) |
| GaN parameters | |||
| µ | Low field electron mobility | 0.1 | (m2/V∙s) |
| ΦB | Schottky Barrier Height (Au-GaN) | 0.88 | (eV) |
| ΦB | Schottky Barrier Height (ITO-GaN) | 0.965 | (eV) |
| vy | Carrier velocity in the y direction (electrons/holes) | 2 × 105/4 × 104 | (m/s) |
| τp | Lifetime of holes | 0.9 × 10−9 | (s) |
| τn | Lifetime of electrons | 1.15 × 10−6 | (s) |
| ε | Permittivity | 9.21 × 10−11 | (F/m) |
| α | Absorption Coefficient @ 350 nm | 8 × 105 | (/m) |
| ZnO parameters | |||
| µ | Low field electron mobility | 0.032 | (m2/V.s) |
| ΦB | Schottky Barrier Height (Au-GaN) | 0.65 | (eV) |
| ΦB | Schottky Barrier Height (AgO2-GaN) | 1.11 | (eV) |
| vy | Carrier velocity in the y direction (electrons/holes) | 2.8 × 105/1.8 × 105 | (m/s) |
| τp | Lifetime of holes | 1 × 10−6 | (s) |
| τn | Lifetime of electrons | 1 × 10−6 | (s) |
| ε | Permittivity | 7.97 × 10−11 | (F/m) |
| α | Absorption Coefficient @ 350 nm | 2.7 × 107 | (/m) |
| SiC parameters | |||
| µ | Low field electron mobility | 0.037 | (m2/V.s) |
| ΦB | Schottky Barrier Height (Au-GaN) | 1.37 | (eV) |
| vy | Carrier velocity in the y direction (electrons/holes) | 2 × 105/9 × 104 | (m/s) |
| τp | Lifetime of holes | 9.19 × 10−9 | (s) |
| τn | Lifetime of electrons | 9.19 × 10−6 | (s) |
| ε | Permittivity | 8.55 × 10−11 | (F/m) |
| α | Absorption Coefficient @ 350 nm | 1.06 × 105 | (/m) |