| SiC front-illuminated model of OPFET with Au gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [This work] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 4 ns | - | - | 0 GHz |
| 1016 | 0.79 V | 2.39 × 108 | 8.64 × 109 | 8.5 × 1010 | 81.12 | 700 ps | 1.62 GHz | 7.75 × 1016 | 2.8 GHz |
| 1019 | 0.97 V | 3.9 × 105 | 1.4 × 107 | 1.37 × 108 | 33.3 | 400 ps | 3.1 GHz | 1.13 × 1014 | 3.2 GHz |
| 1022 | 1.15 V | 6.05 × 102 | 2.19 × 104 | 2.15 × 105 | 33.2 | 288 ps | 2.42 GHz | 1.59 × 1011 | 4.2 GHz |
| ZnO generalized model of OPFET with Au gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [This work] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 837 ps | - | - | 2.7 GHz |
| 1016 | 1.61 V | 1.38 × 109 | 5.52 × 109 | 4.9 × 1011 | 85.9 | 77.3 ps | 38.6 MHz | 3.12 × 1017 | 5.4 GHz |
| 1019 | 2.15 V | 1.8 × 106 | 7 × 106 | 6.2 × 108 | 19.2 | 56.7 ps | 0.13 GHz | 3.9 × 1014 | 7 GHz |
| 1022 | 2.67 V | 4 × 103 | 1.6 × 104 | 1.4 × 106 | 52.9 | 7.8 ps | 3.84 MHz | 7.74 × 1011 | 0.5 GHz |
| ZnO front illuminated model of OPFET with Au gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [This work] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 837 ps | - | - | 2.72 GHz |
| 1016 | 0.58 V | 6.47 × 108 | 2.35 × 109 | 2.3 × 1011 | 72.2 | 197 ps | 7.85 MHz | 1.65 × 1017 | 3.2 GHz |
| 1019 | 0.76 V | 8.4 × 105 | 3.1 × 106 | 3 × 108 | 17.97 | 150 ps | 49 MHz | 2 × 1014 | 3.3 GHz |
| 1022 | 0.93 V | 4.24 × 103 | 1.54 × 104 | 1.5 × 106 | 75.64 | 11 ps | 3.84 MHz | 8.35 × 1011 | 7.86 GHz |
| ZnO generalized model of OPFET with AgO2 gate (vgs = 0 V, Vds = 10 V, λ = 350 nm) [This work] | |||||||||
| Photon Flux Density (/m2-s) | Photovoltage (V) | Responsivity (A/W) | Photocurrent Gain | EQE (%) | Sensitivity (%) | Switching time (s) | Bandwidth (Hz) | Detectivity (cmHz1/2W−1) | fT (Hz) |
| 0 | 0 | - | - | - | - | 2.73 ns | - | -- | 2.46 GHz |
| 1016 | 2.96 V | 2.1 × 109 | 8.4 × 109 | 7.5 × 1011 | 96.6 | 48 ps | 0.625 GHz | 4.75 × 1017 | 5.8 GHz |
| 1019 | 3.5 V | 2.4 × 106 | 9.4 × 106 | 8.4 × 108 | 10.5 | 39 ps | 4.2 GHz | 5.3 × 1014 | 5.8 GHz |
| 1022 | 4.01 V | 3.98 × 103 | 1.59 × 104 | 1.4 × 106 | 40 | 9 ps | 6.2 MHz | 7.9 × 1011 | 28.3 MHz |