| Diode type | Material and technology | flim, Hz (RC, s) | Destination |
| GA401 (ГА401) | Ge, diffusive p-n-junction | (2.2 × 10−12) | Parametric amplifier up to S-band |
| GA402 (ГА402) | Ge, diffusive p-n-junction | 1012 | X-band parametric amplifier |
| DK-s7M (ДК-с7М) | Si, point-contact |
| X-band mixers |
| DK-v4 (ДК-B4) | Si, point-contact |
| X-band video detector |
| KD514A (КД514А) | Si, Schottky | (2.7 × 10−11) | Pulse diode |
| D18 (Д18) | Ge, point-contact | (8 × 10−8) | Pulse diode |
| D604 (Д604) | Si, point-contact | 1010 | Video detector |
| D605 (Д605) | Si, point-contact |
| Detector for C- and part of X-bands (3 - 9, 4 GHz) |
| GI401 (ГИ401) | Ge, tunnel diode |
| Mixers and detectors |