Gate Length L_gate (nm)

Oxide Thickness

t_OX (nm)

Source/Drain Length

L_S/D = L_gate (nm)

Silicon Layer Thickness

t_si = 0.4L_gate (nm)

BOX Thickness t_BOX (nm)

Source/Drain Doping Concentration N_D (m⁻³)

Channel Doping Concentration N_A (m⁻³)

25

2

25

10

50

1 × 10²¹

3 × 10¹⁸

60

2

60

24

80

1 × 10²⁰

1 × 10¹⁸

80

2

80

32

100

1 × 10²⁰

1 × 10¹⁸

100

2

100

40

140

1 × 10¹⁹

1 × 10¹⁸