LASER

Energy

E/(J) ± 10%

Mean

Irradiance (W∙cm−2) × 1012

θ/ degrees

Relative

Flux incident at sample E/L2 (Jcm2)

Type and time of development

Si3N4 Window used

Notes

0.36

0.76

0.44

ECA for 2 mins

Yes

/

0.5

1.06

19˚

0.6

1:1 MIBK + IPA for 2 mins

Yes

/

2.1

4.46

39˚

2.6

ECA for 5 mins

Yes

Still nothing seen on resist

0.5

5.3

59˚

3

ECA for 5 mins

Yes

Still nothing seen on resist

0.9

2.8

32.5˚

1.1

1:1 MIBK + IPA for 2 mins

No

Removing Si3N4 Window allowed a much lower energy to expose Resist

1.4

5.9

14˚

1.73

1:1 MIBK + IPA for 2 mins

No

Removing Si3N4 window allowed a much lower energy to expose Resist