| Run No. | Si2H6 flow rate (sccm) | GeH4 flow rate (sccm) | SnCl4 bubbler flow rate (sccm) | SnCl4 bubbler t emperature (˚C) | H2 flow rate (sccm) | Substrate | Si% | Ge% | Sn% | Film thickness (nm) |
| 1 | 50 | 200 | 25 | 20 | 150 | Sapphire SiO2 | 8.5 8.4 | 85.0 84.9 | 6.5 6.7 | 607 583 |
| 2 | 50 | 200 | 15 | 20 | 150 | Sapphire SiO2 | 25.6 25.9 | 71.9 71.3 | 2.5 2.8 | 234 229 |
| 3 | 50 | 200 | 25 | 10 | 150 | Sapphire Si | 11.6 12.0 | 84.9 84.0 | 3.5 4.0 | 626 616 |
| 4 | 50 | 50 | 20 | 15 | 150 | Sapphire Si | 53.0 53.9 | 45.0 44.3 | 2.0 1.8 | 284 279 |