| Parameters | MoSe2 | CIGSe2 | SDL | ZnS | i-ZnO | ZnO:Al |
| Thickness (μm) | 0.03 | 1.50 | 0.015 | 0.03 | 0.02 | 0.03 |
| Relative permittivity, εr | 14.90 | 13.60 | 13.60 | 9.00 | 9.00 | 9.00 |
| Band gap, Eg (eV) | 1.41 | 1.19 | 1.34 | 3.60 | 3.20 | 3.20 |
| Electron affinity χ (eV) | 4.40 | 4.50 | 4.50 | 4.15 | 4.50 | 4.50 |
| Density of states in conduction band, NC (cm−3) | 2.2 × 1018 | 6.8 × 1017 | 6.8 × 1017 | 2.2 × 1018 | 3.1018 | 3.1017 |
| Density of states in valence band, NV (cm−3) | 1.8 × 1018 | 1.5 × 1019 | 1.5 × 1019 | 1.8 × 1019 | 1.7 × 1019 | 1.7 × 1019 |
| Electron mobility, μn (cm2/Vs) | 100 | 100 | 10 | 100 | 100 | 100 |
| Hole mobility, μp (cm2/Vs) | 50 | 50 | 1,25 | 25 | 31 | 31 |
| Donor concentration, Nd (cm−3) | 0 | 0 | 0 | 1018 | 1018 | 1020 |
| Acceptor concentration, Na (cm−3) | 1019 | 6.1017 | 6.1017 | 0 | 0 | 0 |