| CIGS | CdS | ZnS | ZnSe | In2S2 |
Thickness (µm) | 2 | varied | Varied | Varied | varied |
Band gap (eV) | 1.2 | 2.400 | 3.500 | 2.900 | 2.800 |
Electron affinity (eV) | 4.5 | 4.500 | 4.500 | 4.090 | 4.700 |
Dielectric permittivity (relative) | 13.6 | 10.000 | 10.000 | 10.000 | 13.500 |
CB density of state (cm−3) | 2 × ×1018 | 1.5 × 1018 | 1.5 × 1018 | 1.5 × 1018 | 1.8 × 1019 |
VB density of state (cm−3) | 1.5 × 1019 | 1.8 × 1018 | 1.8 × 1018 | 1.8 × 1019 | 4.0 × 1013 |
µn electron mobility (cm2/Vs) | 100 | 50 | 50 | 50 | 400 |
µh hole mobility (cm²/Vs) | 12.25 | 20 | 20 | 20 | 210 |
Donor density ND (cm−3) | 1 × 1016 | 0 | 0 | 0 | 10 |
Acceptor density NA (cm−3) | 0 | 1 × 1017 | 1 × 1017 | 5.5 × 107 | 1.0 × 1018 |
Electron thermal velocity (cm/s) | 3.9 × 107 | 1.0 × 107 | 1 × 107 | 1.0 × 107 | 1.0 × 107 |
Hole thermal velocity (cm/s) | 1.4 × 107 | 1.0 × 107 | 1 × 107 | 1.0 × 107 | 1.0 × 107 |