Parameters

p-MoSe₂

Layer thickness (nm)

Variable

Layer band-gap: E_g (eV)

1.1

Electrons affinity: χ (eV)

4.372

Dielectric relative permittivity: ε/ε₀

13.6

Conduction band effective density of states: N_c (cm⁻³)

2.2 × 10¹⁸

Valence band effective density of state: N_v (cm⁻³)

1.8 × 10¹⁹

Electron thermal velocity: ν_e (cm/s)

10⁷

Hole thermal velocity: ν_h (cm/s)

10⁷

Electron mobility: µ_e (cm²/Vs)

100

Hole mobility: µ_h (cm²/Vs)

25

Doping concentration (cm⁻³)

1 × 10¹⁶