| Layer Properties | |||||
|
| CIGS | OVC | CdS | i-ZnO | ZnO:B |
| Layer thickness (nm) | Variable | Variable | 50 | 200 | 400 |
| Layer band-gap: Eg (eV) | Variable | Variable | 2.4 | 3.3 | 3.3 |
| Electrons affinity: χ (eV) | 4.5 | Variable | 4.45 | 4.55 | 4.55 |
| Dielectric relative permittivity: ε/ε0 | 13.6 | 13.6 | 10 | 9 | 9 |
| Conduction band effective density of states: Nc (cm−3) | 2.2 × 1018 | 2.2 × 1018 | 1.3 × 1018 | 3.1 × 1018 | 3 × 1018 |
| Valence band effective density of state: Nv (cm−3) | 1.5 × 1019 | 1.5 × 1019 | 9.1 × 1018 | 1.8 × 1019 | 1.8 × 1019 |
| Electron thermal velocity: νe (cm/s) | 3.9 × 107 | 3.9 × 107 | 3.1 × 107 | 2.4 × 107 | 2.4 × 107 |
| Hole thermal velocity: νh (cm/s) | 1.4 × 107 | 1.4 × 107 | 1.6 × 107 | 1.3 × 107 | 1.3 × 107 |
| Electron mobility: µe (cm2/Vs) | 100 | variable | 72 | 100 | 100 |
| Hole mobility: µh (cm2/Vs) | 12.5 | 1.25 | 20 | 31 | 31 |
| Doping concentration (cm−3) | 2.1016 | variable | 5 × 1017 | 1017 | 1020 |
| Bulk defect properties | |||||
| Defect density and type: N (cm−3) | Variable (D) | Variable (D) | 5 × 1016 (A) | 1016 (A) | 1016 (A) |
| Capture cross section electrons: σe (cm2) | 10−15 | 10−13 | 10−15 | 10−15 | 10−15 |
| Capture cross section holes: σh (cm2) | 10−11 | 10−15 | 5 × 10−13 | 5 × 10−13 | 5 × 10−13 |
| Interface properties | |||||
| Interface state | CIGS/OVC | OVC/CdS | |||
| Interface conduction band offset: ΔEc (eV) | 0.3 | 0.0 | |||
| Defect density and type: N (cm−2) | 1011 (Neutral) | 3 × 1013 (Neutral) | |||