| Layer Properties |
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|
|
CIGS |
OVC |
CdS |
i-ZnO |
ZnO:B |
| Layer thickness (nm) |
Variable |
Variable |
50 |
200 |
400 |
| Layer band-gap: Eg (eV) |
Variable |
Variable |
2.4 |
3.3 |
3.3 |
| Electrons affinity: χ (eV) |
4.5 |
Variable |
4.45 |
4.55 |
4.55 |
| Dielectric relative permittivity: ε/ε0 |
13.6 |
13.6 |
10 |
9 |
9 |
| Conduction band effective density of states: Nc (cm−3) |
2.2 × 1018 |
2.2 × 1018 |
1.3 × 1018 |
3.1 × 1018 |
3 × 1018 |
| Valence band effective density of state: Nv (cm−3) |
1.5 × 1019 |
1.5 × 1019 |
9.1 × 1018 |
1.8 × 1019 |
1.8 × 1019 |
| Electron thermal velocity: νe (cm/s) |
3.9 × 107 |
3.9 × 107 |
3.1 × 107 |
2.4 × 107 |
2.4 × 107 |
| Hole thermal velocity: νh (cm/s) |
1.4 × 107 |
1.4 × 107 |
1.6 × 107 |
1.3 × 107 |
1.3 × 107 |
| Electron mobility: µe (cm2/Vs) |
100 |
variable |
72 |
100 |
100 |
| Hole mobility: µh (cm2/Vs) |
12.5 |
1.25 |
20 |
31 |
31 |
| Doping concentration (cm−3) |
2.1016 |
variable |
5 × 1017 |
1017 |
1020 |
| Bulk defect properties |
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| Defect density and type: N (cm−3) |
Variable (D) |
Variable (D) |
5 × 1016 (A) |
1016 (A) |
1016 (A) |
| Capture cross section electrons: σe (cm2) |
10−15 |
10−13 |
10−15 |
10−15 |
10−15 |
| Capture cross section holes: σh (cm2) |
10−11 |
10−15 |
5 × 10−13 |
5 × 10−13 |
5 × 10−13 |
| Interface properties |
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| Interface state |
CIGS/OVC |
OVC/CdS |
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| Interface conduction band offset: ΔEc (eV) |
0.3 |
0.0 |
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| Defect density and type: N (cm−2) |
1011 (Neutral) |
3 × 1013 (Neutral) |
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