Pressure [mbar] | Beam current IW [A] | Temperature T [˚C] | Time of deposition t [min.] | Arc source current IW [A] | Substrate polarization voltage UBIAS [V] |
Ti ion etching | |||||
9 × 10−4 | - | 325 | 10 | 60 | -100 |
W coating deposition | |||||
5 × 10−5 | 0.15 | 200 | 45 | - | - |