| Working argon pressure (mbar) | 2 × 10−3 |
| Initial pressure(mbar) | 1 × 10−6 |
| Au target (%) | 2.6 |
| Bias (V) | −50 |
| Power (W) | 50 |
| Substrate Temperature | 25˚C and 400˚C |
| Annealing Temperatures | 300˚C - 500˚C |