Working argon pressure (mbar) | 2 × 10−3 |
Initial pressure(mbar) | 1 × 10−6 |
Au target (%) | 2.6 |
Bias (V) | −50 |
Power (W) | 50 |
Substrate Temperature | 25˚C and 400˚C |
Annealing Temperatures | 300˚C - 500˚C |