Symbol | Quantity | Value |
Ld | Semiconductot cavity length | 1000 μm |
η | Semiconductor cavity refractive index | 3.6 |
R | Reflection of the rear semiconductor laser cavity mirror | 0.32 |
τs | Carrier lifetime | 2 ns |
τp | Photon lifetime | 20 ps |
n0 | Carrirer number to reach zero again | 2 × 108 |
G | (=dg/dn) | 8 × 10−2 s−1 |
nsp | Inversion factor | 3 |
α | Linewidth enhancement factor | 3 |