Symbol

Quantity

Value

L_d

Semiconductot cavity length

1000 μm

η

Semiconductor cavity refractive index

3.6

R

Reflection of the rear semiconductor laser cavity mirror

0.32

τ_s

Carrier lifetime

2 ns

τ_p

Photon lifetime

20 ps

n₀

Carrirer number to reach zero again

2 × 10⁸

G

(=dg/dn)

8 × 10⁻² s⁻¹

n_sp

Inversion factor

3

α

Linewidth enhancement factor

3