Target sputtering mode

Coating deposition mode

Coating composition and properties

Discharge current

Current density

Power density

Deposition speed

Substrate temperature

Element concentration, at. %

Layer thickness

Roughness* Ra

A

mA/cm2

W/cm2

µm/min

˚C

Сu

С

µm

nm

Pure copper target

1

4

182

91

1.5

350

100

-

45

19/73

Pure MПГ-7 graphite target

2

2

91

46

0.05

350

-

100

1.5

19/25

Cu―82%, С―18% target

3

4

182

91

1.2

350

82

18

36

19/191

4

2

91

46

0.6

350

83

17

27

19/127

5

1

22

16

0.2

350

86

14

12

19/26

Cu―65%, С―35% target

6

4

182

91

0.4

350

65

35

16

19/60

Cu―28%, С―72% target

7

2

91

46

0.1

350

28

72

4.0

19/45

Cu―14%, С―86% target

8

2

91

46

0.08

350

14

86

4.8

19/29

Cu―7%, С―93% target

9

2

91

46

0.06

350

7

93

3.6

19/22