Symbol

Description

Value/unit

W

Gate width

1 µm

L

Gate Length

100 nm

Nd

Donor level concentration

1 × 1019 cm3

K

Boltzmann’s Constant

1.38 × 1023 J/K

T

Operating temperature

300 K

Q

Electronic charge

1.6 × 1019 C

Dd

Thickness of doped layer in Nano-HEMT

90 nm

Di

Thickness of undoped layer in Nano-HEMT

80 nm

Δd=dd+di

Correction factor

170 nm

Фb

Schottky barrier Height

0.697

Μ

Mobility

900 cm2/Vs

Eg

Band gap energy of GaAs

3.44 eV

Nv

Density of state in valance band

9 × 1018 cm3

Nc

Density of state in conduction band

4.7 × 1017 cm3

Єs

Semiconductor Permittivity

12.9 × 8.85 × 1014 F/cm

Vp2

Pinch-off voltage in doped layer

1.75 V

F

Operating Frequency

1 GHz

N

No. of conduction Electrons

1018

αH

Hooge’s Parameter

2×103