Step Process:

7.

Thermal oxide, T = 1000˚C, Tox = 0.3 μm.

8.

LPCVD intrinsic polysilicon, T = 650˚C, Tpoly = 0.5 μm.

9.

Sacrificial oxide deposition, Tox = 3.0 μm

10.

Structural material deposition, Tox = (2.0 μm)

11.

Thermal annealing at 1000˚C, t = 120 minutes in N2.