Step Process: | |
7. | Thermal oxide, T = 1000˚C, Tox = 0.3 μm. |
8. | LPCVD intrinsic polysilicon, T = 650˚C, Tpoly = 0.5 μm. |
9. | Sacrificial oxide deposition, Tox = 3.0 μm |
10. | Structural material deposition, Tox = (2.0 μm) |
11. | Thermal annealing at 1000˚C, t = 120 minutes in N2. |