| Sample | VLSI sample set | Other samples | |||
| Film/substrate | SiO2/Si | SiO2/Si | SiO2/Si | SiO2/Si | SiO2/Si |
| Film thickness (nm) (ellipsometry) (NIST) spectrophotometry | 47.0 | 191.3 | 1049.1 | 294.8 | 2077.7 |
| Film thickness (HCF) (nm) | 47.0 | 191.2 | 1055.7 | 297.4 | 2080.4 |
| % Difference | 0.01 | 0.03 | 0.63 | 0.89 | 0.13 |